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With the development and diversification of satellite technology ,space borne solid-state memory need more storage data volume ,higher storage rate and longer on-orbit life than before. The parallel storage scheme of space borne solid-state memory, which is based on NAND Flash ,has been widely used. However, when solid state memory storage rate is higher ,the increase number of parallel storage Flash chips and the superimposed mapping of bad blocks will make a large loss of solid storage capacity, which is due to the initial bad block of NAND Flash and the larger distribution of Flash chip"s broken block. given the bad block problem of high-speed solid storage ,this article presents an efficient method of bad block management .After address mapping and substitution for bad blocks, the ratio of initial capacity and installed capacity of solid-state memory can be maintained at about 97% in the case of high-speed parallel storage, Flash chip storage capacity utilization can be improved, and lifetime of high-capacity space borne high-speed solid-state memory will be extended.